silicon power

Especificaciones

Características

• High performance transfer bandwidth reaches up to 19.2GB/s ~ 25.6GB/s
• Low voltage of 1.2V for less power consumption
• Original and high quality memory module
• 100% tested for stability, durability, and compatibility
• 30 micro inches Gold Finger Plating (optional)
• Supports operating temperatures from -40°C – 85°C
• Wide Temperature version available by request
• 3200MT/s is only available at 8GB ,16GB, 32GB